Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films

Toshio Takeuchi; Jiro Nishinaga; Atsushi Kawaharazuka; Yoshiji Horikoshi

doi:10.4028/www.scientific.net/DDF.297-301.849

Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films

Toshio Takeuchi^*, Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga ₂O₃)-silicon dioxide (SiO₂) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga₂O₃ oxide and 75-angstrom SiO₂ for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

Original language	English
Title of host publication	Defect and Diffusion Forum
Pages	849-852
Number of pages	4
Volume	297-301
DOIs	https://doi.org/10.4028/www.scientific.net/DDF.297-301.849
Publication status	Published - 2010

Publication series

Name	Defect and Diffusion Forum
Volume	297-301
ISSN (Print)	10120386

Keywords

Gallium oxide
High resolution X-ray photoelectron spectroscopy
Nanolayered structure
Radio frequency magnetron sputtering
Valence band density of states

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Radiation

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10.4028/www.scientific.net/DDF.297-301.849

Cite this

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title = "Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films",

abstract = "High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.",

keywords = "Gallium oxide, High resolution X-ray photoelectron spectroscopy, Nanolayered structure, Radio frequency magnetron sputtering, Valence band density of states",

author = "Toshio Takeuchi and Jiro Nishinaga and Atsushi Kawaharazuka and Yoshiji Horikoshi",

year = "2010",

doi = "10.4028/www.scientific.net/DDF.297-301.849",

language = "English",

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volume = "297-301",

series = "Defect and Diffusion Forum",

pages = "849--852",

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T1 - Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films

AU - Takeuchi, Toshio

AU - Nishinaga, Jiro

AU - Kawaharazuka, Atsushi

AU - Horikoshi, Yoshiji

PY - 2010

Y1 - 2010

N2 - High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

AB - High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

KW - Gallium oxide

KW - High resolution X-ray photoelectron spectroscopy

KW - Nanolayered structure

KW - Radio frequency magnetron sputtering

KW - Valence band density of states

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DO - 10.4028/www.scientific.net/DDF.297-301.849

M3 - Conference contribution

AN - SCOPUS:77952281732

SN - 3908451809

SN - 9783908451808

VL - 297-301

T3 - Defect and Diffusion Forum

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BT - Defect and Diffusion Forum

ER -

Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films

Abstract

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Keywords

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