Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

Kouji Miura; Kazuhiko Sugiura; Ryutaro Souda; Takashi Aizawa; Chuhei Oshima; Yoshio Ishizawa

Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation

Kouji Miura^*, Kazuhiko Sugiura, Ryutaro Souda, Takashi Aizawa, Chuhei Oshima, Yoshio Ishizawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Atomic and electronic structures of the CaF₂/Si(111) interface and the desorption mechanism of F from epitaxial CaF₂(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF₂(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

Original language	English
Pages (from-to)	809-813
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	30
Issue number	4
Publication status	Published - 1991 Apr

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation. / Miura, Kouji; Sugiura, Kazuhiko; Souda, Ryutaro et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 30, No. 4, 04.1991, p. 809-813.

Research output: Contribution to journal › Article › peer-review

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AU - Aizawa, Takashi

AU - Oshima, Chuhei

AU - Ishizawa, Yoshio

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AB - Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

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Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation

Abstract

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