Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor

Engineering & Materials Science

• III-V semiconductors 100%
• Heterojunctions 78%
• Zinc Selenide 36%
• Epilayers 34%
• Molecular beam epitaxy 31%
• Interface states 30%
• Capacitance measurement 29%
• Vacancies 27%
• Voltage measurement 25%
• Microscopes 19%
• Electron microscopes 18%

Physics & Astronomy

• atomic structure 60%
• zincblende 25%
• image resolution 23%
• sublattices 19%
• electrical measurement 19%
• molecular beam epitaxy 17%
• capacitance 16%
• electron microscopes 15%
• microscopes 15%
• high resolution 12%

Chemical Compounds

• Interface State 46%
• Semiconductor 45%
• Molecular Beam Epitaxy 43%
• Surface 19%
• Electron Particle 16%