Autonomous refresh of floating body cell (FBC)

Takashi Ohsawa; Ryo Fukuda; Tomoki Higashi; Katsuyuki Fujita; Fumiyoshi Matsuoka; Tomoaki Shino; Hironobu Furuhashi; Yoshihiro Minami; Hiroomi Nakajima; Takeshi Hamamoto; Yohji Watanabe; Akihiro Nitayama; Tohru Furuyama

doi:10.1109/IEDM.2008.4796819

Autonomous refresh of floating body cell (FBC)

Takashi Ohsawa^*, Ryo Fukuda, Tomoki Higashi, Katsuyuki Fujita, Fumiyoshi Matsuoka, Tomoaki Shino, Hironobu Furuhashi, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Yohji Watanabe, Akihiro Nitayama, Tohru Furuyama

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796819
Publication status	Published - 2008
Externally published	Yes
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2008.4796819

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Ohsawa, T., Fukuda, R., Higashi, T., Fujita, K., Matsuoka, F., Shino, T., Furuhashi, H., Minami, Y., Nakajima, H., Hamamoto, T., Watanabe, Y., Nitayama, A., & Furuyama, T. (2008). Autonomous refresh of floating body cell (FBC). In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796819 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796819

Ohsawa, T, Fukuda, R, Higashi, T, Fujita, K, Matsuoka, F, Shino, T, Furuhashi, H, Minami, Y, Nakajima, H, Hamamoto, T, Watanabe, Y, Nitayama, A & Furuyama, T 2008, Autonomous refresh of floating body cell (FBC). in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796819, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796819

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title = "Autonomous refresh of floating body cell (FBC)",

abstract = "Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.",

author = "Takashi Ohsawa and Ryo Fukuda and Tomoki Higashi and Katsuyuki Fujita and Fumiyoshi Matsuoka and Tomoaki Shino and Hironobu Furuhashi and Yoshihiro Minami and Hiroomi Nakajima and Takeshi Hamamoto and Yohji Watanabe and Akihiro Nitayama and Tohru Furuyama",

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doi = "10.1109/IEDM.2008.4796819",

language = "English",

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series = "Technical Digest - International Electron Devices Meeting, IEDM",

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AU - Ohsawa, Takashi

AU - Fukuda, Ryo

AU - Higashi, Tomoki

AU - Fujita, Katsuyuki

AU - Matsuoka, Fumiyoshi

AU - Shino, Tomoaki

AU - Furuhashi, Hironobu

AU - Minami, Yoshihiro

AU - Nakajima, Hiroomi

AU - Hamamoto, Takeshi

AU - Watanabe, Yohji

AU - Nitayama, Akihiro

AU - Furuyama, Tohru

PY - 2008

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N2 - Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

AB - Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

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Autonomous refresh of floating body cell (FBC)

Abstract

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