Awaking of ferromagnetism in GaMnN through control of Mn valence

S. Sonoda; I. Tanaka; F. Oba; H. Ikeno; H. Hayashi; T. Yamamoto; Y. Yuba; Y. Akasaka; K. Yoshida; M. Aoki; M. Asari; T. Araki; Y. Nanishi; K. Kindo; H. Hori

doi:10.1063/1.2408646

Awaking of ferromagnetism in GaMnN through control of Mn valence

S. Sonoda^*, I. Tanaka, F. Oba, H. Ikeno, H. Hayashi, T. Yamamoto, Y. Yuba, Y. Akasaka, K. Yoshida, M. Aoki, M. Asari, T. Araki, Y. Nanishi, K. Kindo, H. Hori

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

Original language	English
Article number	012504
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2408646
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2408646

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@article{09f5a4a2a2ca4a3088247cb179ee5b3d,

title = "Awaking of ferromagnetism in GaMnN through control of Mn valence",

abstract = "Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.",

author = "S. Sonoda and I. Tanaka and F. Oba and H. Ikeno and H. Hayashi and T. Yamamoto and Y. Yuba and Y. Akasaka and K. Yoshida and M. Aoki and M. Asari and T. Araki and Y. Nanishi and K. Kindo and H. Hori",

note = "Funding Information: This work was supported of three projects by Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT). They are the computational materials science unit in Kyoto University, the Grant-in-Aid for Scientific Research (A), and the 21st century COE program. The NEXAFS experiments at KEK-PF were made under Proposal No. 2005G212. The authors express their gratitude to the Low Temperature Center in Osaka University for the use of SQUID.",

year = "2007",

doi = "10.1063/1.2408646",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

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TY - JOUR

T1 - Awaking of ferromagnetism in GaMnN through control of Mn valence

AU - Sonoda, S.

AU - Tanaka, I.

AU - Oba, F.

AU - Ikeno, H.

AU - Hayashi, H.

AU - Yamamoto, T.

AU - Yuba, Y.

AU - Akasaka, Y.

AU - Yoshida, K.

AU - Aoki, M.

AU - Asari, M.

AU - Araki, T.

AU - Nanishi, Y.

AU - Kindo, K.

AU - Hori, H.

N1 - Funding Information: This work was supported of three projects by Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT). They are the computational materials science unit in Kyoto University, the Grant-in-Aid for Scientific Research (A), and the 21st century COE program. The NEXAFS experiments at KEK-PF were made under Proposal No. 2005G212. The authors express their gratitude to the Low Temperature Center in Osaka University for the use of SQUID.

PY - 2007

Y1 - 2007

N2 - Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

AB - Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

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DO - 10.1063/1.2408646

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012504

ER -

Awaking of ferromagnetism in GaMnN through control of Mn valence

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