Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7+

Yukio Fujiwara; Kouji Kondou; Kouji Watanabe; Hidehiko Nonaka; Naoaki Saito; Hiroshi Itoh; Toshiyuki Fujimoto; Akira Kurokawa; Shingo Ichimura; Mitsuhiro Tomita

doi:10.1143/JJAP.46.L854

Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir₄(CO)₇⁺

Yukio Fujiwara^*, Kouji Kondou, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The surface topography of Si(100) bombarded with 2.5-10keV Ir ₄(CO)₇⁺ at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir₄(CO)₇⁺ bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

Original language	English
Pages (from-to)	L854-L857
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	33-35
DOIs	https://doi.org/10.1143/JJAP.46.L854
Publication status	Published - 2007 Sept 7
Externally published	Yes

Keywords

AFM
Ion beam
Ir(CO)
Metal cluster complex
Nanotechnology
Ripple
Silicon
Sputtering
Surface roughness
Surface topography

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.L854

Cite this

@article{233acd62cfc04ced9d2c3a2a6c028dfb,

title = "Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7+",

abstract = "The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7+ at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7+ bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.",

keywords = "AFM, Ion beam, Ir(CO), Metal cluster complex, Nanotechnology, Ripple, Silicon, Sputtering, Surface roughness, Surface topography",

author = "Yukio Fujiwara and Kouji Kondou and Kouji Watanabe and Hidehiko Nonaka and Naoaki Saito and Hiroshi Itoh and Toshiyuki Fujimoto and Akira Kurokawa and Shingo Ichimura and Mitsuhiro Tomita",

year = "2007",

month = sep,

day = "7",

doi = "10.1143/JJAP.46.L854",

language = "English",

volume = "46",

pages = "L854--L857",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "33-35",

}

TY - JOUR

T1 - Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7+

AU - Fujiwara, Yukio

AU - Kondou, Kouji

AU - Watanabe, Kouji

AU - Nonaka, Hidehiko

AU - Saito, Naoaki

AU - Itoh, Hiroshi

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

PY - 2007/9/7

Y1 - 2007/9/7

N2 - The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7+ at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7+ bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

AB - The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7+ at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7+ bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

KW - AFM

KW - Ion beam

KW - Ir(CO)

KW - Metal cluster complex

KW - Nanotechnology

KW - Ripple

KW - Silicon

KW - Sputtering

KW - Surface roughness

KW - Surface topography

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JO - Japanese Journal of Applied Physics, Part 2: Letters

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