Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7+

Yukio Fujiwara*, Kouji Kondou, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7+ at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7+ bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

Original languageEnglish
Pages (from-to)L854-L857
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number33-35
Publication statusPublished - 2007 Sept 7
Externally publishedYes


  • AFM
  • Ion beam
  • Ir(CO)
  • Metal cluster complex
  • Nanotechnology
  • Ripple
  • Silicon
  • Sputtering
  • Surface roughness
  • Surface topography

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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