Behavior of Cu-In-Te electrodeposition from acid solution

Takahiro Ishizaki; Nagahiro Saito; Daisuke Yata; Akio Fuwa

Behavior of Cu-In-Te electrodeposition from acid solution

Takahiro Ishizaki^*, Nagahiro Saito, Daisuke Yata, Akio Fuwa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ternary compound-semiconductor, CuInTe₂, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl₂, InCl₃, TeO₂ and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe₂. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

Original language	English
Title of host publication	Proceedings of the Second International Conference on Processing Materials for Properties
Editors	B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages	281-284
Number of pages	4
Publication status	Published - 2000
Event	Proceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA Duration: 2000 Nov 5 → 2000 Nov 8

Other

Other	Proceedings of the Second International Conference on Processing Materials for Properties
City	San Francisco, CA
Period	00/11/5 → 00/11/8

ASJC Scopus subject areas

Engineering(all)

Cite this

Behavior of Cu-In-Te electrodeposition from acid solution. / Ishizaki, Takahiro; Saito, Nagahiro; Yata, Daisuke et al.
Proceedings of the Second International Conference on Processing Materials for Properties. ed. / B. Mishra; C, Yamauchi; B. Mishra; C. Yamauchi. 2000. p. 281-284.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ishizaki, T, Saito, N, Yata, D & Fuwa, A 2000, Behavior of Cu-In-Te electrodeposition from acid solution. in B Mishra, C Yamauchi, B Mishra & C Yamauchi (eds), Proceedings of the Second International Conference on Processing Materials for Properties. pp. 281-284, Proceedings of the Second International Conference on Processing Materials for Properties, San Francisco, CA, 00/11/5.

@inproceedings{b8df0b9a45be47ae826afeeb9572d9a3,

title = "Behavior of Cu-In-Te electrodeposition from acid solution",

abstract = "Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.",

author = "Takahiro Ishizaki and Nagahiro Saito and Daisuke Yata and Akio Fuwa",

year = "2000",

language = "English",

isbn = "087339495X",

pages = "281--284",

editor = "B. Mishra and C, Yamauchi and B. Mishra and C. Yamauchi",

booktitle = "Proceedings of the Second International Conference on Processing Materials for Properties",

note = "Proceedings of the Second International Conference on Processing Materials for Properties ; Conference date: 05-11-2000 Through 08-11-2000",

}

TY - GEN

T1 - Behavior of Cu-In-Te electrodeposition from acid solution

AU - Ishizaki, Takahiro

AU - Saito, Nagahiro

AU - Yata, Daisuke

AU - Fuwa, Akio

PY - 2000

Y1 - 2000

N2 - Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

AB - Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

UR - http://www.scopus.com/inward/record.url?scp=0034592612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034592612&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034592612

SN - 087339495X

SP - 281

EP - 284

BT - Proceedings of the Second International Conference on Processing Materials for Properties

A2 - Mishra, B.

A2 - Yamauchi, C,

A2 - Mishra, B.

A2 - Yamauchi, C.

T2 - Proceedings of the Second International Conference on Processing Materials for Properties

Y2 - 5 November 2000 through 8 November 2000

ER -

Behavior of Cu-In-Te electrodeposition from acid solution

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this