Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Iwao Ohdomari; Toyohiro Chikyow; Hiroshi Kawarada; Kazuo Konuma; Masakazu Kakumu; Kazuhiko Hashimoto; Itsuro Kimura; Kenji Yoneda

doi:10.1063/1.336930

Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Iwao Ohdomari^*, Toyohiro Chikyow, Hiroshi Kawarada, Kazuo Konuma, Masakazu Kakumu, Kazuhiko Hashimoto, Itsuro Kimura, Kenji Yoneda

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The behavior of ion implanted As atoms during MoSi₂ formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi₂/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi₂/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi₂ formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

Original language	English
Pages (from-to)	3073-3076
Number of pages	4
Journal	Journal of Applied Physics
Volume	59
Issue number	9
DOIs	https://doi.org/10.1063/1.336930
Publication status	Published - 1986 Dec 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation",

abstract = "The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.",

author = "Iwao Ohdomari and Toyohiro Chikyow and Hiroshi Kawarada and Kazuo Konuma and Masakazu Kakumu and Kazuhiko Hashimoto and Itsuro Kimura and Kenji Yoneda",

year = "1986",

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doi = "10.1063/1.336930",

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TY - JOUR

T1 - Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

AU - Ohdomari, Iwao

AU - Chikyow, Toyohiro

AU - Kawarada, Hiroshi

AU - Konuma, Kazuo

AU - Kakumu, Masakazu

AU - Hashimoto, Kazuhiko

AU - Kimura, Itsuro

AU - Yoneda, Kenji

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

AB - The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

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JO - Journal of Applied Physics

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Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

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