Beryllium-doped single-crystal diamond grown by microwave plasma CVD

K. Ueda*, M. Kasu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from ∼ 1016 to ∼ 1018 cm- 3 by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)-related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films.

Original languageEnglish
Pages (from-to)121-123
Number of pages3
JournalDiamond and Related Materials
Volume18
Issue number2-3
DOIs
Publication statusPublished - 2009 Feb
Externally publishedYes

Keywords

  • Beryllium
  • CVD
  • Cathodoluminescence
  • Diamond
  • Doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Chemistry(all)
  • Electrical and Electronic Engineering

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