Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

Hiroshi Uchida; Ken Nishida; Minoru Osada; [No Value] Funakubo; Seiichiro Koda

doi:10.1109/ISAF.2007.4393194

Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

Hiroshi Uchida^*, Ken Nishida, Minoru Osada, [No Value] Funakubo, Seiichiro Koda

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin films of Bi-based perovskite ferroelectrics BiFeO ₃ is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O ₃. Authors fabricated BiFeO ₃ thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La ³⁺ or Nd ³⁺, could be substituted for Bi ³⁺ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO ₃ films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi ₄Ti ₃O ₁₂. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm ² comparable or superior to conventional Pb(Zr,Ti)O ₃ films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO ₃ films.

Original language	English
Title of host publication	IEEE International Symposium on Applications of Ferroelectrics
Pages	138-141
Number of pages	4
DOIs	https://doi.org/10.1109/ISAF.2007.4393194
Publication status	Published - 2007
Externally published	Yes
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 2007 May 27 → 2007 May 31

Other

Other	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	07/5/27 → 07/5/31

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

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10.1109/ISAF.2007.4393194

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Uchida, H, Nishida, K, Osada, M, Funakubo, NV & Koda, S 2007, Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. in IEEE International Symposium on Applications of Ferroelectrics., 4393194, pp. 138-141, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 07/5/27. https://doi.org/10.1109/ISAF.2007.4393194

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title = "Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification",

abstract = "Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.",

author = "Hiroshi Uchida and Ken Nishida and Minoru Osada and Funakubo, {[No Value]} and Seiichiro Koda",

year = "2007",

doi = "10.1109/ISAF.2007.4393194",

language = "English",

isbn = "1424413338",

pages = "138--141",

booktitle = "IEEE International Symposium on Applications of Ferroelectrics",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

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T1 - Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

AU - Uchida, Hiroshi

AU - Nishida, Ken

AU - Osada, Minoru

AU - Funakubo, [No Value]

AU - Koda, Seiichiro

PY - 2007

Y1 - 2007

N2 - Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.

AB - Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.

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DO - 10.1109/ISAF.2007.4393194

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SN - 1424413338

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BT - IEEE International Symposium on Applications of Ferroelectrics

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Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

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