Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

M. Kohda; T. Kita; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1063/1.2219141

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n⁺-GaAs Esaki diode

M. Kohda^*, T. Kita, Y. Ohno, F. Matsukura, H. Ohno

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We investigated injection of spin polarized electrons in a (Ga,Mn)As/n ⁺-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (P_EL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum P_EL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

Original language	English
Article number	012103
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219141
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2219141

Cite this

@article{d7772605c1ed411796d695b4a467028e,

title = "Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode",

abstract = "We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.",

author = "M. Kohda and T. Kita and Y. Ohno and F. Matsukura and H. Ohno",

note = "Funding Information: The authors would like to acknowledge T. Dietl, K. Ohtani, H. Sanada, and D. Chiba for valuable discussions. This work was partly supported by Grant-in-Aids from JSPS and MEXT. ",

year = "2006",

doi = "10.1063/1.2219141",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

AU - Kohda, M.

AU - Kita, T.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors would like to acknowledge T. Dietl, K. Ohtani, H. Sanada, and D. Chiba for valuable discussions. This work was partly supported by Grant-in-Aids from JSPS and MEXT.

PY - 2006

Y1 - 2006

N2 - We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

AB - We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

UR - http://www.scopus.com/inward/record.url?scp=33745842964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745842964&partnerID=8YFLogxK

U2 - 10.1063/1.2219141

DO - 10.1063/1.2219141

M3 - Article

AN - SCOPUS:33745842964

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012103

ER -

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n⁺-GaAs Esaki diode

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this