Abstract
We propose a simple method to estimate the biexcitonic contribution to the excitonic non-linearity. The method is based on the time integrated four-wave mixing (TI FWM) with picosecond pulses. The TI FWM signal, which is measured as a function of the delay between pump and test pulses, shows shift towards positive and negative time delay when the laser is tuned at the exciton and biexciton resonance, respectively. We show theoretically that the magnitude of the shift allows us to estimate the biexcitonic contribution to the third-order non-linearity at the fundamental band edge.
Original language | English |
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Pages (from-to) | 197-201 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 127 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2003 Jul |
Externally published | Yes |
Keywords
- A. GaN
- A. Semiconductors
- E. Four-wave mixing
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry