Blocking characteristics of diamond junctions with a punch-through design

We accurately project the blocking capability of diamond junctions with a punch-through design, carrying out the ionization integration that adopts our previous ionization coefficients and hence explicitly giving the breakdown voltage and field as a function of the doping concentration and length of drift layers. Comparing to this result, we assess the blocking capability of various junctions reported in the literature and find that most of these results fall short of our projections more than a little but that a few of them fit closely or approximately with ours and outperform the theoretical projections of others that are based on ionization coefficients other than ours. Albeit thus being most plausible, the ionization coefficient of this study is still empirical in any way. Accordingly, theoretical and experimental efforts are both further needed in order to pursue the ultimate blocking capability of diamond.