Abstract
Laser diode operation has been obtained from (Zn,Cd)Se/ZnSe and (Zn,Cd)Se/Zn(S,Se) quantum well structures in the blue and the green. The devices, prepared on p- and n-type (In,Ga)As or GaAs buffer layers for lattice matching purposes to control the defect density, have been operated at near-room-temperature conditions and briefly at room temperature with uncoated end facets. Quasi-continuous wave operation has been obtained at T=77 K.
Original language | English |
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Pages (from-to) | 2045-2047 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)