Blue-purplish InGaN quantum wells with shallow depth of exciton localization

Tetsuya Akasaka*, Hideki Gotoh, Hedetoshi Nakano, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.

Original languageEnglish
Article number191902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2005 May 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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