Abstract
In this work, strong low-temperature bonding of silicon and crystalline quartz wafers, effecting in mechanical strength, which is close to initial materials has been described. High bonding strength is associated with minimization of the residual stresses, optimization of surface activation, and application of an electric field during annealing. The bonding has a wide application field because both, silicon and crystalline quartz are key materials for many devices including generators, high frequency filters, gyroscopes, microbalances of high stability, etc.
| Translated title of the contribution | Bonding of silicon and crystal quartz wafers at the minimized residual stresses |
|---|---|
| Original language | Undefined/Unknown |
| Pages (from-to) | 239-242 |
| Number of pages | 4 |
| Journal | Przeglad Elektrotechniczny |
| Volume | 87 |
| Issue number | 8 |
| Publication status | Published - 2011 |
Keywords
- Bonding
- Crystal quartz
- Plasma surface processing
- Residual stress
- Silicon
ASJC Scopus subject areas
- Electrical and Electronic Engineering