TY - GEN
T1 - Bonding properties of low-temperature wafer bonding using sub-micron gold particles with different particle sizes
AU - Ishida, Hiroyuki
AU - Ogashiwa, Toshinori
AU - Kanehira, Yukio
AU - Ito, Shin
AU - Yazaki, Takuya
AU - Shoji, Shuichi
AU - Mizuno, Jun
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Low-temperature wafer bonding using sub-micron gold particles was investigated. Wafer-level pattern transfer method has also been developed to enable patterning on wafers with fragile structures such as MEMS devices. Sub-micron Au particle patterns with a width of 20 μm - 60 μm and a height around 20 μm were formed on 100mm-diameter glass wafers by means of wafer-level processing using photolithography and a slurry-filling technique, and then successfully transferred onto Si wafers in ambient atmosphere at a temperature of 150°C and an applied pressure of 20 MPa - 30 MPa. Wafer bonding was performed at 200°C, 100 MPa and exhibited a sufficient tensile strength of 45.8 MPa. A good hermeticity was also confirmed as He leak rate of < 1 × 10-9 Pa·m3/s. Compression deformation measurement was performed for patterns with different mean particle sizes of 0.3μm and 0.1μm and the performance on a-few-μm surface roughness absorption was demonstrated. Patterns with smaller size particles showed larger deformation, or more ability to absorb surface opography.
AB - Low-temperature wafer bonding using sub-micron gold particles was investigated. Wafer-level pattern transfer method has also been developed to enable patterning on wafers with fragile structures such as MEMS devices. Sub-micron Au particle patterns with a width of 20 μm - 60 μm and a height around 20 μm were formed on 100mm-diameter glass wafers by means of wafer-level processing using photolithography and a slurry-filling technique, and then successfully transferred onto Si wafers in ambient atmosphere at a temperature of 150°C and an applied pressure of 20 MPa - 30 MPa. Wafer bonding was performed at 200°C, 100 MPa and exhibited a sufficient tensile strength of 45.8 MPa. A good hermeticity was also confirmed as He leak rate of < 1 × 10-9 Pa·m3/s. Compression deformation measurement was performed for patterns with different mean particle sizes of 0.3μm and 0.1μm and the performance on a-few-μm surface roughness absorption was demonstrated. Patterns with smaller size particles showed larger deformation, or more ability to absorb surface opography.
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U2 - 10.1109/IMPACT.2012.6420217
DO - 10.1109/IMPACT.2012.6420217
M3 - Conference contribution
AN - SCOPUS:84874258240
SN - 9781467316385
T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
SP - 167
EP - 170
BT - 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
T2 - 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
Y2 - 24 October 2012 through 26 October 2012
ER -