Boron δ-doped (111) diamond solution gate field effect transistors

Robert Edgington, A. Rahim Ruslinda, Syunsuke Sato, Yuichiro Ishiyama, Kyosuke Tsuge, Tasuku Ono, Hiroshi Kawarada, Richard B. Jackman*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (1. 1. 1) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I- V) characteristics in comparison to previous similar devices fabricated on (1. 0. 0) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200 μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36. mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

Original languageEnglish
Pages (from-to)152-157
Number of pages6
JournalBiosensors and Bioelectronics
Issue number1
Publication statusPublished - 2012 Mar 15


  • Delta-doping
  • Diamond
  • Field-effect transistor
  • PH sensor

ASJC Scopus subject areas

  • Biotechnology
  • Biophysics
  • Biomedical Engineering
  • Electrochemistry


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