Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method

K. Ishii; T. Morita; D. Isshiki; Y. Ohki

Breakdown characteristics of thin SiO₂ films deposited from TEOS using plasma CVD method

K. Ishii^*, T. Morita, D. Isshiki, Y. Ohki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

For higher integration, higher speed, and smaller power consumption, Amorphous SiO₂ thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO₂ deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO₂ in TEOS using the plasma CVD method and some properties including the dielectric strength.

Original language	English
Title of host publication	Annual Report - Conference on Electrical Insulation and Dielectric Phenomena
Editors	Anon
Publisher	Publ by IEEE
Pages	355-358
Number of pages	4
ISBN (Print)	0780309669
Publication status	Published - 1993 Dec 1
Event	Proceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena - Pocono Manor, PA, USA Duration: 1993 Oct 17 → 1993 Oct 20

Publication series

Name	Annual Report - Conference on Electrical Insulation and Dielectric Phenomena
ISSN (Print)	0084-9162

Other

Other	Proceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena
City	Pocono Manor, PA, USA
Period	93/10/17 → 93/10/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Building and Construction

Cite this

Breakdown characteristics of thin SiO₂ films deposited from TEOS using plasma CVD method. / Ishii, K.; Morita, T.; Isshiki, D. et al.
Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. ed. / Anon. Publ by IEEE, 1993. p. 355-358 (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ishii, K, Morita, T, Isshiki, D & Ohki, Y 1993, Breakdown characteristics of thin SiO₂ films deposited from TEOS using plasma CVD method. in Anon (ed.), Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, Publ by IEEE, pp. 355-358, Proceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena, Pocono Manor, PA, USA, 93/10/17.

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AB - For higher integration, higher speed, and smaller power consumption, Amorphous SiO2 thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO2 deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO2 in TEOS using the plasma CVD method and some properties including the dielectric strength.

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