Brillouin scattering study in the GaN epitaxial layer

Y. Takagi; M. Ahart; T. Azuhata; T. Sota; K. Suzuki; S. Nakamura

doi:10.1016/0921-4526(95)00807-1

Brillouin scattering study in the GaN epitaxial layer

Y. Takagi^*, M. Ahart, T. Azuhata, T. Sota, K. Suzuki, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In_0.05Ga_0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

Original language	English
Pages (from-to)	547-549
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	219-220
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(95)00807-1
Publication status	Published - 1996 Apr 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(95)00807-1

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abstract = "We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.",

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AU - Takagi, Y.

AU - Ahart, M.

AU - Azuhata, T.

AU - Sota, T.

AU - Suzuki, K.

AU - Nakamura, S.

PY - 1996/4/1

Y1 - 1996/4/1

N2 - We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

AB - We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Brillouin scattering study in the GaN epitaxial layer

Abstract

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