Brillouin scattering study of bulk GaN

M. Yamaguchi; T. Yagi; T. Sota; T. Deguchi; K. Shimada; S. Nakamura

doi:10.1063/1.370635

Brillouin scattering study of bulk GaN

M. Yamaguchi^*, T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

84 Citations (Scopus)

Abstract

High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.

Original language	English
Pages (from-to)	8502-8504
Number of pages	3
Journal	Journal of Applied Physics
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.370635
Publication status	Published - 1999 Jun 15

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.370635

Cite this

@article{68317fbafb744afabd7c136499422c8b,

title = "Brillouin scattering study of bulk GaN",

abstract = "High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.",

author = "M. Yamaguchi and T. Yagi and T. Sota and T. Deguchi and K. Shimada and S. Nakamura",

year = "1999",

month = jun,

day = "15",

doi = "10.1063/1.370635",

language = "English",

volume = "85",

pages = "8502--8504",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Brillouin scattering study of bulk GaN

AU - Yamaguchi, M.

AU - Yagi, T.

AU - Sota, T.

AU - Deguchi, T.

AU - Shimada, K.

AU - Nakamura, S.

PY - 1999/6/15

Y1 - 1999/6/15

N2 - High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.

AB - High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.

UR - http://www.scopus.com/inward/record.url?scp=0000007445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000007445&partnerID=8YFLogxK

U2 - 10.1063/1.370635

DO - 10.1063/1.370635

M3 - Article

AN - SCOPUS:0000007445

SN - 0021-8979

VL - 85

SP - 8502

EP - 8504

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Brillouin scattering study of bulk GaN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this