Brillouin scattering study of bulk GaN

M. Yamaguchi*, T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

84 Citations (Scopus)


High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.

Original languageEnglish
Pages (from-to)8502-8504
Number of pages3
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 1999 Jun 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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