Abstract
High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastics constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 241-248 |
| Number of pages | 8 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 9 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1997 Jan 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics