Brillouin scattering study of gallium nitride: Elastic stiffness constants

M. Yamaguchi*, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastics constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.

Original languageEnglish
Pages (from-to)241-248
Number of pages8
JournalJournal of Physics Condensed Matter
Issue number1
Publication statusPublished - 1997 Jan 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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