High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastics constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.
|Number of pages||8|
|Journal||Journal of Physics Condensed Matter|
|Publication status||Published - 1997 Jan 6|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics