C 60 field effect transistor with electrodes modified by La@C 82

Nobuya Hiroshiba; Katsumi Tanigaki; Ryotaro Kumashiro; Hirotaka Ohashi; Takatsugu Wakahara; Takeshi Akasaka

doi:10.1016/j.cplett.2004.10.070

C 60 field effect transistor with electrodes modified by La@C 82

Nobuya Hiroshiba, Katsumi Tanigaki, Ryotaro Kumashiro, Hirotaka Ohashi, Takatsugu Wakahara, Takeshi Akasaka

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

C ₆₀ field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C ₆₀/La@C ₈₂-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C ₆₀ FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C ₆₀ thin film surface and the gold electrodes.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	Chemical Physics Letters
Volume	400
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2004.10.070
Publication status	Published - 2004 Dec 11
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Spectroscopy
Atomic and Molecular Physics, and Optics

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10.1016/j.cplett.2004.10.070

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title = "C 60 field effect transistor with electrodes modified by La@C 82 ",

abstract = "C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.",

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AU - Hiroshiba, Nobuya

AU - Tanigaki, Katsumi

AU - Kumashiro, Ryotaro

AU - Ohashi, Hirotaka

AU - Wakahara, Takatsugu

AU - Akasaka, Takeshi

PY - 2004/12/11

Y1 - 2004/12/11

N2 - C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.

AB - C 60 field effect transistors (FETs) with interfacial modifications of electrodes using endohedral fullerene, C 60/La@C 82-FETs, are reported. An FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs. Another improvement in the field effect mobilities is also observed with little change in the threshold voltage. The interfacial surface modifications on the electrodes using endohedral fullerene analogues with large number of carriers are effective in reducing the trapping levels at the interface between C 60 thin film surface and the gold electrodes.

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C 60 field effect transistor with electrodes modified by La@C 82

Abstract

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