TY - GEN
T1 - C-axis parallel oriented A1N film resonator fabricated by ion-beam assisted RF magnetron sputtering
AU - Suzuki, Masashi
AU - Yanagitani, Takahiko
PY - 2011/12/1
Y1 - 2011/12/1
N2 - c-axis parallel oriented AlN films excite only pure shear wave. These films are suitable for thickness shear mode film resonators and SH-SAW devices. However, c-axis in the wurzite film such as ZnO and AlN tends to grow normal to the substrate. We previously found that c-axis parallel orientation is induced by ion-beam irradiation during deposition in ZnO films. In this study, we investigated the orientation control of AlN films by using ion-beam assisted RF magnetron sputtering. c-axis parallel oriented AlN films were obtained in the sample deposited under 3 kV accelerated ion beam irradiation The direction of c-axis corresponded to the ion beam direction. c-axis parallel AlN film SMR with asymmetric Bragg reflector was then prepared. Pure shear mode was excited in the resonator. Effective k 15′ of the resonator was determined to be 0.052, and TCF was found to be -30.2 ppm/°C.
AB - c-axis parallel oriented AlN films excite only pure shear wave. These films are suitable for thickness shear mode film resonators and SH-SAW devices. However, c-axis in the wurzite film such as ZnO and AlN tends to grow normal to the substrate. We previously found that c-axis parallel orientation is induced by ion-beam irradiation during deposition in ZnO films. In this study, we investigated the orientation control of AlN films by using ion-beam assisted RF magnetron sputtering. c-axis parallel oriented AlN films were obtained in the sample deposited under 3 kV accelerated ion beam irradiation The direction of c-axis corresponded to the ion beam direction. c-axis parallel AlN film SMR with asymmetric Bragg reflector was then prepared. Pure shear mode was excited in the resonator. Effective k 15′ of the resonator was determined to be 0.052, and TCF was found to be -30.2 ppm/°C.
KW - AlN
KW - SMR
KW - c-axis parallel film
KW - crystalline orientation control
KW - pure shear mode
UR - http://www.scopus.com/inward/record.url?scp=84869068666&partnerID=8YFLogxK
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U2 - 10.1109/ULTSYM.2011.0303
DO - 10.1109/ULTSYM.2011.0303
M3 - Conference contribution
AN - SCOPUS:84869068666
SN - 9781457712531
T3 - IEEE International Ultrasonics Symposium, IUS
SP - 1230
EP - 1233
BT - 2011 IEEE International Ultrasonics Symposium, IUS 2011
T2 - 2011 IEEE International Ultrasonics Symposium, IUS 2011
Y2 - 18 October 2011 through 21 October 2011
ER -