TY - GEN
T1 - C-axis parallel oriented ZnO film SH-SAW sensor for electrical conductivity measurement in liquid
AU - Nakahigashi, Yuta
AU - Yanagitani, Takahiko
AU - Matsukawa, Mami
AU - Watanabe, Yoshiaki
PY - 2011/12/1
Y1 - 2011/12/1
N2 - A shear horizontal type surface acoustic wave (SH-SAW) device can be a sensor operating in liquid, because SH-SAW propagates at liquid/solid interface without energy leakage to liquid. This device can detect changes in conductivity and viscosity of liquid. c-axis parallel oriented ZnO film can be one of the best candidates for the SH-SAW liquid sensor on various substrates. Theoretical investigation of K 2 value in IDT / ZnO (0°, 90°, ψ) film / silica glass substrate structure showed that maximum value of K 2 = 3.4 % was found at ψ = 55° with H / λ = 0.21. In this study, we fabricated these structures and evaluated K 2 values. Finally, the electrical conductivity of liquid was detected as the velocity change.
AB - A shear horizontal type surface acoustic wave (SH-SAW) device can be a sensor operating in liquid, because SH-SAW propagates at liquid/solid interface without energy leakage to liquid. This device can detect changes in conductivity and viscosity of liquid. c-axis parallel oriented ZnO film can be one of the best candidates for the SH-SAW liquid sensor on various substrates. Theoretical investigation of K 2 value in IDT / ZnO (0°, 90°, ψ) film / silica glass substrate structure showed that maximum value of K 2 = 3.4 % was found at ψ = 55° with H / λ = 0.21. In this study, we fabricated these structures and evaluated K 2 values. Finally, the electrical conductivity of liquid was detected as the velocity change.
KW - SH-SAW
KW - c-axis parallel oriented ZnO film
KW - sensor
UR - http://www.scopus.com/inward/record.url?scp=84869043203&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869043203&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2011.0198
DO - 10.1109/ULTSYM.2011.0198
M3 - Conference contribution
AN - SCOPUS:84869043203
SN - 9781457712531
T3 - IEEE International Ultrasonics Symposium, IUS
SP - 810
EP - 813
BT - 2011 IEEE International Ultrasonics Symposium, IUS 2011
T2 - 2011 IEEE International Ultrasonics Symposium, IUS 2011
Y2 - 18 October 2011 through 21 October 2011
ER -