C-H surface diamond field effect transistors for high temperature (400 °c) and high voltage (500V) operation

H. Kawarada*, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, A. Daicho, T. Saito, A. Hiraiwa

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

149 Citations (Scopus)

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Physics & Astronomy