Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Hiroshi Ito; Toshiki Makimoto

doi:10.1063/1.104781

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

Hiroshi Ito^*, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×10²⁰ cm^-3 in Al_0.4Ga_0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×10¹⁹ cm ^-3 base doping.

Original language	English
Pages (from-to)	2770-2772
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	24
DOIs	https://doi.org/10.1063/1.104781
Publication status	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.104781

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title = "Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy",

abstract = "This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.",

author = "Hiroshi Ito and Toshiki Makimoto",

year = "1991",

doi = "10.1063/1.104781",

language = "English",

volume = "58",

pages = "2770--2772",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

AU - Ito, Hiroshi

AU - Makimoto, Toshiki

PY - 1991

Y1 - 1991

N2 - This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.

AB - This letter investigates carbon doping in AlGaAs using flow-rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm-3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME-grown compositionally graded carbon-doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm -3 base doping.

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DO - 10.1063/1.104781

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Carbon doping in AlGaAs for AlGaAs/GaAs graded-base heterojunction bipolar transistor by flow-rate modulation epitaxy

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