Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi; Toshiki Makimoto

doi:10.1016/0169-4332(94)90229-1

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi^*, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH₂ bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH₃ radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH₃ groups.

Original language	English
Pages (from-to)	284-289
Number of pages	6
Journal	Applied Surface Science
Volume	82-83
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)90229-1
Publication status	Published - 1994 Dec 2
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(94)90229-1

Cite this

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title = "Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs",

abstract = "By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH2 bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH3 radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH3 groups.",

author = "Naoki Kobayashi and Toshiki Makimoto",

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T1 - Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

AU - Kobayashi, Naoki

AU - Makimoto, Toshiki

PY - 1994/12/2

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N2 - By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH2 bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH3 radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH3 groups.

AB - By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH2 bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH3 radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH3 groups.

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JO - Applied Surface Science

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ER -

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Abstract

ASJC Scopus subject areas

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