Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Toshiki Makimoto; Shi Shya Chang

doi:10.1143/JJAP.31.L797

Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Toshiki Makimoto^*, Shi Shya Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×10⁴ cm²/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×10¹¹ cm^-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

Original language	English
Pages (from-to)	L797-L798
Journal	Japanese journal of applied physics
Volume	31
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.31.L797
Publication status	Published - 1992 Jun
Externally published	Yes

Keywords

Aigaas/GaAs
Carbon doping
Fme
Hole mobility
Mocvd
P-type
Two-dimensional hole gas

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.31.L797

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title = "Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition",

abstract = "Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.",

keywords = "Aigaas/GaAs, Carbon doping, Fme, Hole mobility, Mocvd, P-type, Two-dimensional hole gas",

author = "Toshiki Makimoto and Chang, {Shi Shya}",

year = "1992",

month = jun,

doi = "10.1143/JJAP.31.L797",

language = "English",

volume = "31",

pages = "L797--L798",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

AU - Makimoto, Toshiki

AU - Chang, Shi Shya

PY - 1992/6

Y1 - 1992/6

N2 - Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

AB - Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

KW - Aigaas/GaAs

KW - Carbon doping

KW - Fme

KW - Hole mobility

KW - Mocvd

KW - P-type

KW - Two-dimensional hole gas

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Abstract

Keywords

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