@inproceedings{abf752f5003d4f7e8bcb16d4c86b39d5,
title = "Carrier spin relaxation in InGaAs/AlAsSb quantum wells",
abstract = "We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells by time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.38 μm-electron-heavy-hole excitons at 150 K is obtained to be 34-43 ps at an excitation power of 50-80 mW. The observed carrier density dependence and temperature independence of the spin relaxation time indicate that the spin relaxation mechanism is dominated by the Bir-Aronov-Pikus process.",
keywords = "Dynamics, Electronics, Excitons, GaAs",
author = "T. Nukui and S. Gozu and T. Mozume and S. Izumi and Y. Saeki and A. Tackeuchi",
year = "2011",
doi = "10.1063/1.3666549",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "659--660",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}