Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD

Yoshihiro Yokota*, Hiroshi Kawarada, Jing Sheng Ma, Kazuhito Nishimura, Akio Hiraki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1990 Jun 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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