Abstract
A variety of cathodoluminescence depending on crystal perfection, impurities, and defects such as vacancies and interstitials have been investigated in undoped, boron-doped, and nitrogen-doped CVD diamonds. The free exciton recombination radiation is sensitive to the perfection and purity of diamonds and is located in {100} sectors. The bound exciton recombination radiation depends on the amount of boron in diamonds. The 5RL center is strong in the undoped diamonds after neutron irradiation and supposed to be related to intrinsic defects such as self-interstitials. The 2.16 eV and the 3.19 eV centers are observed prominently in the nitrogen-doped diamonds after electron irradiation and subsequent annealing. The origins of the 2.16 center (nitrogen-vacancy complex) are located in {100} sectors.
| Original language | English |
|---|---|
| Pages (from-to) | 152-159 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1325 |
| Publication status | Published - 1990 Dec 1 |
| Externally published | Yes |
| Event | Diamond Optics III - San Diego, CA, USA Duration: 1990 Jul 9 → 1990 Jul 11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering