Cause of the 5.0 ev absorption band in pure silica glass

Ryoichi Tohmon; Yoshiya Yamasaka; Kaya Nagasawa; Yoshimichi Ohki; Yoshimasa Hama

doi:10.1016/S0022-3093(87)80667-1

Cause of the 5.0 ev absorption band in pure silica glass

Ryoichi Tohmon^*, Yoshiya Yamasaka, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The optical absorption band at 5.0 eV (the 'B₂ band') is classified into two types (B₂α: and B₂β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B₂α band. The 7.6 eV and the B₂α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.

Original language	English
Pages (from-to)	671-678
Number of pages	8
Journal	Journal of Non-Crystalline Solids
Volume	95-96
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(87)80667-1
Publication status	Published - 1987 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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abstract = "The optical absorption band at 5.0 eV (the 'B2 band') is classified into two types (B2α: and B2β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B2α band. The 7.6 eV and the B2α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.",

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T1 - Cause of the 5.0 ev absorption band in pure silica glass

AU - Tohmon, Ryoichi

AU - Yamasaka, Yoshiya

AU - Nagasawa, Kaya

AU - Ohki, Yoshimichi

AU - Hama, Yoshimasa

PY - 1987/12/1

Y1 - 1987/12/1

N2 - The optical absorption band at 5.0 eV (the 'B2 band') is classified into two types (B2α: and B2β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B2α band. The 7.6 eV and the B2α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.

AB - The optical absorption band at 5.0 eV (the 'B2 band') is classified into two types (B2α: and B2β), each having different photoluminescence peak, half width, and decreasing characteristic by heat treatment. The 7.6 eV absorption band is found in samples with the B2α band. The 7.6 eV and the B2α bands are caused by the same oxygen vacancy in the form of {triple bond, long}Si-Si{triple bond, long}. The former band is due to a singlet-to-singlet transition, while the latter to a singlet-totriplet transition.

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Cause of the 5.0 ev absorption band in pure silica glass

Abstract

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