CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

G. F. Lorusso; N. Collaert; R. Rooyackers; M. Ercken; I. Pollentier; S. Cheng; B. Degroote; M. Jurczak; S. Biesemans; O. Richard; H. Bender; A. Azordegan; R. Kuppa; S. Shirke; J. Prochazka; Timothy Edward Long

CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

G. F. Lorusso^*, N. Collaert, R. Rooyackers, M. Ercken, I. Pollentier, S. Cheng, B. Degroote, M. Jurczak, S. Biesemans, O. Richard, H. Bender, A. Azordegan, R. Kuppa, S. Shirke, J. Prochazka, Timothy Edward Long

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.

Original language	English
Article number	PE223
Pages (from-to)	169-172
Number of pages	4
Journal	IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
Publication status	Published - 2005 Dec 15
Externally published	Yes
Event	IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, United States Duration: 2005 Sept 13 → 2005 Sept 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

Lorusso, G. F., Collaert, N., Rooyackers, R., Ercken, M., Pollentier, I., Cheng, S., Degroote, B., Jurczak, M., Biesemans, S., Richard, O., Bender, H., Azordegan, A., Kuppa, R., Shirke, S., Prochazka, J., & Long, T. E. (2005). CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 169-172. [PE223].

Lorusso, GF, Collaert, N, Rooyackers, R, Ercken, M, Pollentier, I, Cheng, S, Degroote, B, Jurczak, M, Biesemans, S, Richard, O, Bender, H, Azordegan, A, Kuppa, R, Shirke, S, Prochazka, J & Long, TE 2005, 'CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices', IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, pp. 169-172.

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title = "CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices",

abstract = "We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.",

author = "Lorusso, {G. F.} and N. Collaert and R. Rooyackers and M. Ercken and I. Pollentier and S. Cheng and B. Degroote and M. Jurczak and S. Biesemans and O. Richard and H. Bender and A. Azordegan and R. Kuppa and S. Shirke and J. Prochazka and Long, {Timothy Edward}",

year = "2005",

month = dec,

day = "15",

language = "English",

pages = "169--172",

journal = "IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings",

issn = "1523-553X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings ; Conference date: 13-09-2005 Through 15-09-2005",

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TY - JOUR

T1 - CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

AU - Lorusso, G. F.

AU - Collaert, N.

AU - Rooyackers, R.

AU - Ercken, M.

AU - Pollentier, I.

AU - Cheng, S.

AU - Degroote, B.

AU - Jurczak, M.

AU - Biesemans, S.

AU - Richard, O.

AU - Bender, H.

AU - Azordegan, A.

AU - Kuppa, R.

AU - Shirke, S.

AU - Prochazka, J.

AU - Long, Timothy Edward

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.

AB - We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.

UR - http://www.scopus.com/inward/record.url?scp=28744454194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28744454194&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:28744454194

SN - 1523-553X

SP - 169

EP - 172

JO - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

JF - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

M1 - PE223

T2 - IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings

Y2 - 13 September 2005 through 15 September 2005

ER -

CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

Abstract

ASJC Scopus subject areas

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