CdTe and CdZnTe detectors for timing measurements

Yuu Okada*, Tadayuki Takahashi, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Kunishiro Mori, Kazuo Makishima

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)


    We report the timing properties of CdTe and CdZnTe detectors in planar configuration. By utilizing 241Am doped scintilator, we have developed a new method to evaluate the timing performance of the semiconductor detector. We confirm that the slow mobility and short life time of holes significantly degrades the timing performance. To achieve high carrier speed, either by applying a high electric field or by selecting only electrons, is very important for obtaining a detector with fast, ∼ nsec timing capability. To select only the electron events, we adopt the pulse height selection with a fast-slow shaping amplifier. In conjunction with a newly developed CdTe diode, we obtain a superior performance of 5.8 nsec. We also discuss the application for Positron Emission Tomography with 511 keV gamma-gamma coincidence method, and found that a geometrical arrangement in which electrodes are parallel to the incident γ-rays gives about 3 time better timing response than is available when the electrodes are perpendicular to the γ-ray beam.

    Original languageEnglish
    Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
    Number of pages5
    Publication statusPublished - 2002
    Event2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA
    Duration: 2001 Nov 42001 Nov 10


    Other2001 IEEE Nuclear Science Symposium Conference Record
    CitySan Diego, CA


    • CdTe
    • CdZnTe
    • Timing

    ASJC Scopus subject areas

    • Computer Vision and Pattern Recognition
    • Industrial and Manufacturing Engineering


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