Abstract
We describe a stacked detector made of thin CdTe diode detectors. By using a thin CdTe device, we can overcome the charge loss problem due to the small mobility and short lifetime of holes in CdTe or CdZnTe detectors. However, a CdTe detector with a thickness of more than 5 mm is needed for adequate detection efficiency for gamma-rays of several hundred keV. Good energy resolution and good peak detection efficiency are difficult to obtain using such a thick CdTe detector. The stacked detector enabled us to realize a detector with both high energy resolution (∼ 1%) and good efficiencies for gamma-rays up to several hundred keV. In this paper, we report the advantage of CdTe thin detectors and the performance of CdTe stacked detectors made of ten layers of a 0.5 mm thick CdTe diode detectors with a surface area of 21.5 mm × 21.5 mm.
| Original language | English |
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| Title of host publication | IEEE Nuclear Science Symposium and Medical Imaging Conference |
| Pages | 2434-2438 |
| Number of pages | 5 |
| Volume | 4 |
| Publication status | Published - 2002 |
| Event | 2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA Duration: 2001 Nov 4 → 2001 Nov 10 |
Other
| Other | 2001 IEEE Nuclear Science Symposium Conference Record |
|---|---|
| City | San Diego, CA |
| Period | 01/11/4 → 01/11/10 |
Keywords
- CdTe
- CdTe diode detector
- CdZnTe
- Stacked detector
ASJC Scopus subject areas
- Computer Vision and Pattern Recognition
- Industrial and Manufacturing Engineering