Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Takefumi Kamioka; Fumiya Isono; Takahiro Yoshida; Iwao Ohdomari; Takanobu Watanabe

doi:10.1002/pssc.201100684

Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Takefumi Kamioka^*, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari, Takanobu Watanabe

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.

Original language	English
Pages (from-to)	1418-1422
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	6
DOIs	https://doi.org/10.1002/pssc.201100684
Publication status	Published - 2012 Jun

Keywords

Dopant activation
Ion implantation
Point defects
Scanning tunnelling microscopy
Surface modification

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201100684

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abstract = "We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.",

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author = "Takefumi Kamioka and Fumiya Isono and Takahiro Yoshida and Iwao Ohdomari and Takanobu Watanabe",

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T1 - Challenge for STM observation of dopant activation process on Si(001)

T2 - In-situ ion irradiation and hydrogenation

AU - Kamioka, Takefumi

AU - Isono, Fumiya

AU - Yoshida, Takahiro

AU - Ohdomari, Iwao

AU - Watanabe, Takanobu

PY - 2012/6

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AB - We propose a new strategy for in-situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid-metal-ion-source ion-gun (LMIS-IG/STM): (1) in-situ real-time observation of Si(001)-2×1 surface modified with dopant ions, and (2) in-situ hydrogen passivation of Si(001)-2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)-2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes.

KW - Dopant activation

KW - Ion implantation

KW - Point defects

KW - Scanning tunnelling microscopy

KW - Surface modification

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Challenge for STM observation of dopant activation process on Si(001): In-situ ion irradiation and hydrogenation

Abstract

Keywords

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