Change in structure and TFT performances of IZO, IGO and IGZO films by crystallization

Ayaka Suko; Junjun Jia; Shinichi Nakamura; Yuzo Shigesato

Change in structure and TFT performances of IZO, IGO and IGZO films by crystallization

Ayaka Suko, Junjun Jia, Shinichi Nakamura, Yuzo Shigesato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

How the a-IGZO films crystallize and how the crystallinity affects the electrical properties, hence the TFT performances, have been investigated in detail. a-IGZO thin films were post-annealed in air at 300-1000 °C for 1h. HREM analyses revealed the crystallization behavior in detail. For the comparative purpose the crystallization behaviors of a-IGO and a-IZO films are also investigated.

Original language	English
Title of host publication	22nd International Display Workshops, IDW 2015
Publisher	International Display Workshops
Pages	12-13
Number of pages	2
ISBN (Electronic)	9781510845503
Publication status	Published - 2015 Jan 1
Externally published	Yes
Event	22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 2015 Dec 9 → 2015 Dec 11

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	22nd International Display Workshops, IDW 2015
Country/Territory	Japan
City	Otsu
Period	15/12/9 → 15/12/11

Keywords

Crystal
IGO
IGZO
IZO
Oxide-semiconductor

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Change in structure and TFT performances of IZO, IGO and IGZO films by crystallization. / Suko, Ayaka; Jia, Junjun; Nakamura, Shinichi et al.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 12-13 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - How the a-IGZO films crystallize and how the crystallinity affects the electrical properties, hence the TFT performances, have been investigated in detail. a-IGZO thin films were post-annealed in air at 300-1000 °C for 1h. HREM analyses revealed the crystallization behavior in detail. For the comparative purpose the crystallization behaviors of a-IGO and a-IZO films are also investigated.

AB - How the a-IGZO films crystallize and how the crystallinity affects the electrical properties, hence the TFT performances, have been investigated in detail. a-IGZO thin films were post-annealed in air at 300-1000 °C for 1h. HREM analyses revealed the crystallization behavior in detail. For the comparative purpose the crystallization behaviors of a-IGO and a-IZO films are also investigated.

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M3 - Conference contribution

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SP - 12

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PB - International Display Workshops

T2 - 22nd International Display Workshops, IDW 2015

Y2 - 9 December 2015 through 11 December 2015

ER -

Change in structure and TFT performances of IZO, IGO and IGZO films by crystallization

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

UN SDGs

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