Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement

K. Hirama*, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Umezawa, H. Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In this work, the channel mobility (μch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance-voltage (C-V) measurement, and the gate-to-channel capacitance (CGC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 1014cm- 3). In a 60-μm gate-length diamond MOSFET, a μch of 145cm2/Vs was obtained, which is comparable to that of a SiC inversion layer.

Original languageEnglish
Pages (from-to)1256-1258
Number of pages3
JournalDiamond and Related Materials
Issue number7-10
Publication statusPublished - 2008 Jul 1


  • C-V measurement
  • Diamond
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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