Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

Yukio Fujiwara; Kouji Kondou; Hidehiko Nonaka; Naoaki Saito; Toshiyuki Fujimoto; Akira Kurokawa; Shingo Ichimura; Mitsuhiro Tomita

doi:10.1063/1.2786906

Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

Yukio Fujiwara^*, Kouji Kondou, Hidehiko Nonaka, Naoaki Saito, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Tetrairidium dodecacarbonyl (Ir4 (CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir4 (CO) 7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.

Original language	English
Article number	073509
Journal	Journal of Applied Physics
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.2786906
Publication status	Published - 2007 Oct 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences",

abstract = "Tetrairidium dodecacarbonyl (Ir4 (CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir4 (CO) 7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.",

author = "Yukio Fujiwara and Kouji Kondou and Hidehiko Nonaka and Naoaki Saito and Toshiyuki Fujimoto and Akira Kurokawa and Shingo Ichimura and Mitsuhiro Tomita",

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T1 - Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

AU - Fujiwara, Yukio

AU - Kondou, Kouji

AU - Nonaka, Hidehiko

AU - Saito, Naoaki

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

PY - 2007/10/22

Y1 - 2007/10/22

N2 - Tetrairidium dodecacarbonyl (Ir4 (CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir4 (CO) 7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.

AB - Tetrairidium dodecacarbonyl (Ir4 (CO)12) is an organometallic compound called metal cluster complex which has a molecular weight of 1104.9. To investigate its irradiation effect, silicon substrates sputtered with 10 keV Ir4 (CO) 7+ were analyzed by high resolution Rutherford backscattering spectrometry. Experimental results were examined on the basis of a conventional theory of simultaneous implantation and sputtering. The introduction of oxygen gas during sputtering proved to form a thick oxide layer in the substrate, resulting in iridium segregation at the silicon-oxide interface and carbon accumulation near the surface. It was confirmed that oxygen partial pressure significantly affected the characteristics of an altered layer beneath a sputtered surface.

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Characteristics of altered layers formed by sputtering with a massive molecular ion containing diverse elements with large mass differences

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