Characteristics of CuGaSe2 layers grown on GaAs substrates

Miki Fujita*, Atsushi Kawaharazuka, Yoshiji Horikoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


CuGaSe2 films are grown on GaAs (001) substrates by migration-enhanced epitaxy. Electron probe X-ray micro analysis measurement shows that the CuGaSe2 films are stoichiometric regardless of the Cu/Ga supply ratio, which indicates that migration-enhanced epitaxy is useful for making stoichio-metric CuGaSe2 films. Hall effect measurement indicates the p-type conductivity with the hole mobility as high as 2700 cm 2/Vs at low temperatures. The photoluminescence spectrum at 4 K is dominated by the band-edge emission which includes both A-band free and bound exciton emissions. The emission due to donor-acceptor pairs and other deep levels are observed very weakly. Moreover, at temperatures above 180 K, a new emission band appears in the higher energy region of the band-edge emissions. The peak is tentatively attributed to the emission including the B-band free exciton. These results indicate that the optical properties of the CuGaSe 2 films grown by using migration-enhanced epitaxy are fairly good.

Original languageEnglish
Pages (from-to)154-157
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 2013


  • Characterization
  • Migration enhanced epitaxy
  • Molecular beam epitaxy
  • Optical microscopy
  • Semiconductor ternary compounds
  • Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry


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