Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1109/ICIPRM.2009.5012424

Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.

Original language	English
Title of host publication	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages	73-74
Number of pages	2
DOIs	https://doi.org/10.1109/ICIPRM.2009.5012424
Publication status	Published - 2009
Externally published	Yes
Event	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States Duration: 2009 May 10 → 2009 May 14

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Other

Other	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/Territory	United States
City	Newport Beach, CA
Period	09/5/10 → 09/5/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ICIPRM.2009.5012424

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 73-74). Article 5012424 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012424

Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 73-74 5012424 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2009, Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate. in IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009., 5012424, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 73-74, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 09/5/10. https://doi.org/10.1109/ICIPRM.2009.5012424

@inproceedings{27a6fb43881946f7999308c7d590111a,

title = "Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate",

abstract = "We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2009",

doi = "10.1109/ICIPRM.2009.5012424",

language = "English",

isbn = "9781424434336",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "73--74",

booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",

note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",

}

TY - GEN

T1 - Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2009

Y1 - 2009

N2 - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.

AB - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113K.

UR - http://www.scopus.com/inward/record.url?scp=70349478688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349478688&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2009.5012424

DO - 10.1109/ICIPRM.2009.5012424

M3 - Conference contribution

AN - SCOPUS:70349478688

SN - 9781424434336

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 73

EP - 74

BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

Y2 - 10 May 2009 through 14 May 2009

ER -

Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate

Abstract

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