Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

Yoshifumi Takanashi; Kiyoto Takahata; Yoshifumi Muramoto

doi:10.1109/55.735750

Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

Yoshifumi Takanashi^*, Kiyoto Takahata, Yoshifumi Muramoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristics of In-AlAs/InGaAs high electron mobility transistor (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.

Original language	English
Pages (from-to)	472-474
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	12
DOIs	https://doi.org/10.1109/55.735750
Publication status	Published - 1998 Dec
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination",

abstract = "The current-voltage (I-V) characteristics of In-AlAs/InGaAs high electron mobility transistor (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.",

author = "Yoshifumi Takanashi and Kiyoto Takahata and Yoshifumi Muramoto",

year = "1998",

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journal = "IEEE Electron Device Letters",

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T1 - Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

AU - Takanashi, Yoshifumi

AU - Takahata, Kiyoto

AU - Muramoto, Yoshifumi

PY - 1998/12

Y1 - 1998/12

N2 - The current-voltage (I-V) characteristics of In-AlAs/InGaAs high electron mobility transistor (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.

AB - The current-voltage (I-V) characteristics of In-AlAs/InGaAs high electron mobility transistor (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel layer accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel. The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.

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Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

Abstract

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