Characteristics of Narrow-Channel Polysilicon Thin-Film Transistors

Noriyoshi Yamauchi

doi:10.1109/16.119042

Characteristics of Narrow-Channel Polysilicon Thin-Film Transistors

Noriyoshi Yamauchi

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of channel width on the characteristics of polvsilicon thin-film transistors (TFT) was investigated. n-channel TFT’s with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 pm were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5 pm. This decrease was found to be correlated with the decrease in grain-boundary trap density.

Original language	English
Pages (from-to)	1967-1968
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	38
Issue number	8
DOIs	https://doi.org/10.1109/16.119042
Publication status	Published - 1991 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.119042

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abstract = "The effect of channel width on the characteristics of polvsilicon thin-film transistors (TFT) was investigated. n-channel TFT{\textquoteright}s with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 pm were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5 pm. This decrease was found to be correlated with the decrease in grain-boundary trap density.",

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AB - The effect of channel width on the characteristics of polvsilicon thin-film transistors (TFT) was investigated. n-channel TFT’s with a channel length L of 20 μm and a channel width W ranging from 20 to 0.5 pm were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5 pm. This decrease was found to be correlated with the decrease in grain-boundary trap density.

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JO - IEEE Transactions on Electron Devices

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Characteristics of Narrow-Channel Polysilicon Thin-Film Transistors

Abstract

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