TY - JOUR
T1 - Characteristics of Photoelectrochemical Cells with ITO/p-Si Heterojunction Photoelectrodes Coated with Conducting Polymers
AU - Hayshi, Taketoshi
AU - Funaoka, Hidehiko
AU - Osaka, Tetsuya
PY - 1987
Y1 - 1987
N2 - The Indium Tin Oxide (ITO)/p-Si heterojunction electrode was coated with polyaniline and its derivatives in order to improve the durability of photoefectrochemical (PEC) cells composed of ITO/p-Si electrode. ITO (containing 5 wt% SnO2) was evaporated by an electron beam evaporator onto Si substrate. Conducting polymers were prepared by galvanostatic eleetropolymerization on ITO/p-Si at 10 μA.cm-2, A 500 W Xenon lamp with an infrared filter was used for illumination. Although the quantum yield and the energy conversion efficiency of the PEC cell using the polymer-coated electrode were reduced by its higher resistance and photoabsorption of the polymer itself. However, the stability of the PEC cell was greatly improved. Particularly, the photdcurrent of the PEC composed of ITO/p-Si coated with polyaniline was found to be less than 20% degradation of the initial current value after 100 h photoirradiation.
AB - The Indium Tin Oxide (ITO)/p-Si heterojunction electrode was coated with polyaniline and its derivatives in order to improve the durability of photoefectrochemical (PEC) cells composed of ITO/p-Si electrode. ITO (containing 5 wt% SnO2) was evaporated by an electron beam evaporator onto Si substrate. Conducting polymers were prepared by galvanostatic eleetropolymerization on ITO/p-Si at 10 μA.cm-2, A 500 W Xenon lamp with an infrared filter was used for illumination. Although the quantum yield and the energy conversion efficiency of the PEC cell using the polymer-coated electrode were reduced by its higher resistance and photoabsorption of the polymer itself. However, the stability of the PEC cell was greatly improved. Particularly, the photdcurrent of the PEC composed of ITO/p-Si coated with polyaniline was found to be less than 20% degradation of the initial current value after 100 h photoirradiation.
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U2 - 10.1246/nikkashi.1987.152
DO - 10.1246/nikkashi.1987.152
M3 - Article
AN - SCOPUS:85018650090
SN - 0369-4577
VL - 1987
SP - 152
EP - 155
JO - NIPPON KAGAKU KAISHI
JF - NIPPON KAGAKU KAISHI
IS - 2
ER -