Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda; Tsutomu Tezuka; Daisuke Kosemura; Motohiro Tomita; Atsushi Ogura

doi:10.1016/j.sse.2013.01.042

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda^*, Tsutomu Tezuka, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Local anisotropic strain relaxation at the free edge of the stained SiGe layers after isolation of strained SiGe layers was evaluated using the high-NA and oil-immersion Raman method adopting high numerical aperture (NA:1.4) lens and oil immersion techniques. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the technique, and that the anisotropic strain measurement was realized for the strained-SiGe layers. It was found that the strain was more significantly relax in St-SGOI than in St-SiGe around each edge. The result implies that the relaxation mechanism of the SiGe mesas on the SiO2-Box layer and on the Si substrate may be different from each other.

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Solid-State Electronics
Volume	83
DOIs	https://doi.org/10.1016/j.sse.2013.01.042
Publication status	Published - 2013
Externally published	Yes

Keywords

Channel
MOSFET
Raman
Relaxation
SiGe
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2013.01.042

Cite this

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title = "Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method",

abstract = "Local anisotropic strain relaxation at the free edge of the stained SiGe layers after isolation of strained SiGe layers was evaluated using the high-NA and oil-immersion Raman method adopting high numerical aperture (NA:1.4) lens and oil immersion techniques. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the technique, and that the anisotropic strain measurement was realized for the strained-SiGe layers. It was found that the strain was more significantly relax in St-SGOI than in St-SiGe around each edge. The result implies that the relaxation mechanism of the SiGe mesas on the SiO2-Box layer and on the Si substrate may be different from each other.",

keywords = "Channel, MOSFET, Raman, Relaxation, SiGe, Strain",

author = "Koji Usuda and Tsutomu Tezuka and Daisuke Kosemura and Motohiro Tomita and Atsushi Ogura",

note = "Funding Information: This work was supported by the Japan Society for the Promotion of Science through the “Funding Program for World-Leading Innovation R&D on Science and Technology”. ",

year = "2013",

doi = "10.1016/j.sse.2013.01.042",

language = "English",

volume = "83",

pages = "46--49",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

AU - Usuda, Koji

AU - Tezuka, Tsutomu

AU - Kosemura, Daisuke

AU - Tomita, Motohiro

AU - Ogura, Atsushi

N1 - Funding Information: This work was supported by the Japan Society for the Promotion of Science through the “Funding Program for World-Leading Innovation R&D on Science and Technology”.

PY - 2013

Y1 - 2013

N2 - Local anisotropic strain relaxation at the free edge of the stained SiGe layers after isolation of strained SiGe layers was evaluated using the high-NA and oil-immersion Raman method adopting high numerical aperture (NA:1.4) lens and oil immersion techniques. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the technique, and that the anisotropic strain measurement was realized for the strained-SiGe layers. It was found that the strain was more significantly relax in St-SGOI than in St-SiGe around each edge. The result implies that the relaxation mechanism of the SiGe mesas on the SiO2-Box layer and on the Si substrate may be different from each other.

AB - Local anisotropic strain relaxation at the free edge of the stained SiGe layers after isolation of strained SiGe layers was evaluated using the high-NA and oil-immersion Raman method adopting high numerical aperture (NA:1.4) lens and oil immersion techniques. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the technique, and that the anisotropic strain measurement was realized for the strained-SiGe layers. It was found that the strain was more significantly relax in St-SGOI than in St-SiGe around each edge. The result implies that the relaxation mechanism of the SiGe mesas on the SiO2-Box layer and on the Si substrate may be different from each other.

KW - Channel

KW - MOSFET

KW - Raman

KW - Relaxation

KW - SiGe

KW - Strain

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DO - 10.1016/j.sse.2013.01.042

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AN - SCOPUS:84883453841

SN - 0038-1101

VL - 83

SP - 46

EP - 49

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Abstract

Keywords

ASJC Scopus subject areas

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