Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda; Daisuke Kosemura; Motohiro Tomita; Atsushi Ogura; Tsutomu Tezuka

doi:10.1109/ISTDM.2012.6222440

Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda^*, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura, Tsutomu Tezuka

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.

Original language	English
Title of host publication	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages	26-27
Number of pages	2
DOIs	https://doi.org/10.1109/ISTDM.2012.6222440
Publication status	Published - 2012 Jul 30
Externally published	Yes
Event	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States Duration: 2012 Jun 4 → 2012 Jun 6

Publication series

Name	2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other	6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Country/Territory	United States
City	Berkeley, CA
Period	12/6/4 → 12/6/6

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2012.6222440

Cite this

Usuda, K., Kosemura, D., Tomita, M., Ogura, A., & Tezuka, T. (2012). Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 26-27). Article 6222440 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). https://doi.org/10.1109/ISTDM.2012.6222440

Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. / Usuda, Koji; Kosemura, Daisuke; Tomita, Motohiro et al.
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 26-27 6222440 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Usuda, K, Kosemura, D, Tomita, M, Ogura, A & Tezuka, T 2012, Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222440, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 26-27, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222440

Usuda K, Kosemura D, Tomita M, Ogura A, Tezuka T. Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 26-27. 6222440. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings). doi: 10.1109/ISTDM.2012.6222440

Usuda, Koji ; Kosemura, Daisuke ; Tomita, Motohiro et al. / Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 26-27 (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

@inproceedings{af4c02ff70724fd087b51dbef01d8098,

title = "Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method",

abstract = "We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.",

author = "Koji Usuda and Daisuke Kosemura and Motohiro Tomita and Atsushi Ogura and Tsutomu Tezuka",

year = "2012",

month = jul,

day = "30",

doi = "10.1109/ISTDM.2012.6222440",

language = "English",

isbn = "9781457718625",

series = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

pages = "26--27",

booktitle = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

note = "6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 ; Conference date: 04-06-2012 Through 06-06-2012",

}

TY - GEN

T1 - Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

AU - Usuda, Koji

AU - Kosemura, Daisuke

AU - Tomita, Motohiro

AU - Ogura, Atsushi

AU - Tezuka, Tsutomu

PY - 2012/7/30

Y1 - 2012/7/30

N2 - We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.

AB - We have investigated strain relaxation of strained SiGe layers after mesa isolation with a newly developed Raman method with a high number aperture (NA) lens and an immersion technique. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the high-NA (1.4) lens and oil immersion technique, and that the non-destructive, and anisotropic strain measurement was successively realized for the strained-SiGe layers. On the other hand, it was found that the strain was more significantly relax in St-SGOI mesas than in St-SiGe mesas. The result implies that the relaxation mechanism in the strained SiGe/Si layer is different from that in St-SGOI layer.

UR - http://www.scopus.com/inward/record.url?scp=84864194324&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864194324&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2012.6222440

DO - 10.1109/ISTDM.2012.6222440

M3 - Conference contribution

AN - SCOPUS:84864194324

SN - 9781457718625

T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

SP - 26

EP - 27

BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012

Y2 - 4 June 2012 through 6 June 2012

ER -

Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

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