Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa; K. Akahane; A. Kanno; T. Kawanishi

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa^*, K. Akahane, A. Kanno, T. Kawanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2013
Pages	CTh4J.8
Publication status	Published - 2013 Nov 18
Externally published	Yes
Event	CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14

Publication series

Name	CLEO: Science and Innovations, CLEO_SI 2013

Other

Other	CLEO: Science and Innovations, CLEO_SI 2013
Country/Territory	United States
City	San Jose, CA
Period	13/6/9 → 13/6/14

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{83740d5703d54a1ca7cdb3da404d8565,

title = "Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer",

abstract = "We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.",

author = "T. Umezawa and K. Akahane and A. Kanno and T. Kawanishi",

year = "2013",

month = nov,

day = "18",

language = "English",

isbn = "9781557529725",

series = "CLEO: Science and Innovations, CLEO_SI 2013",

pages = "CTh4J.8",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO_SI 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

}

TY - GEN

T1 - Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Kawanishi, T.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

AB - We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

UR - http://www.scopus.com/inward/record.url?scp=84887448550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887448550&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887448550

SN - 9781557529725

T3 - CLEO: Science and Innovations, CLEO_SI 2013

SP - CTh4J.8

BT - CLEO

T2 - CLEO: Science and Innovations, CLEO_SI 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

Abstract

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Other

ASJC Scopus subject areas

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