Abstract
The internal and internal structures of diamond particles and films on Si substrates formed by plasma-assisted chemical vapor deposition have been investigated by high-voltage transmission electron microscopy. The feature of line defects - micro-twin lamellae or stacking faults - in a diamond particle indicates the concentric crystal growth originated from one nucleus. The particles are observed to be in direct contact with the Si substrate around the nucleation site within the resolution limit. The particles are stacked up to form a diamond film.
Original language | English |
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Pages (from-to) | 1904-1906 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 26 |
Issue number | 11 |
Publication status | Published - 1987 Nov |
Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)