Characterization of high-quality polycrystalline diamond and its high FET performance

K. Ueda*, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (fT) and power gain (fmax) were 45 and 120 GHz, respectively. The maximum drain current (IDS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.

Original languageEnglish
Pages (from-to)1954-1957
Number of pages4
JournalDiamond and Related Materials
Issue number11-12 SPEC. ISS.
Publication statusPublished - 2006 Nov
Externally publishedYes


  • FET
  • Hydrogen-terminated
  • Polycrystalline diamond
  • RF performance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Chemistry(all)
  • Electrical and Electronic Engineering


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