Characterization of high-quality polycrystalline diamond and its high FET performance

K. Ueda; M. Kasu; Y. Yamauchi; T. Makimoto; M. Schwitters; D. J. Twitchen; G. A. Scarsbrook; S. E. Coe

doi:10.1016/j.diamond.2006.07.021

Characterization of high-quality polycrystalline diamond and its high FET performance

K. Ueda^*, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (f_T) and power gain (f_max) were 45 and 120 GHz, respectively. The maximum drain current (I_DS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.

Original language	English
Pages (from-to)	1954-1957
Number of pages	4
Journal	Diamond and Related Materials
Volume	15
Issue number	11-12 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.diamond.2006.07.021
Publication status	Published - 2006 Nov
Externally published	Yes

Keywords

FET
Hydrogen-terminated
Polycrystalline diamond
RF performance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Chemistry(all)
Electrical and Electronic Engineering

Access to Document

10.1016/j.diamond.2006.07.021

Cite this

@article{354f5dd548de4e248eeb17b6251dcba9,

title = "Characterization of high-quality polycrystalline diamond and its high FET performance",

abstract = "We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (fT) and power gain (fmax) were 45 and 120 GHz, respectively. The maximum drain current (IDS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.",

keywords = "FET, Hydrogen-terminated, Polycrystalline diamond, RF performance",

author = "K. Ueda and M. Kasu and Y. Yamauchi and T. Makimoto and M. Schwitters and Twitchen, {D. J.} and Scarsbrook, {G. A.} and Coe, {S. E.}",

note = "Funding Information: The authors with NTT thank Dr. T. Enoki (NTT Photonics Laboratories) for discussions on RF devices. They also thank Drs. K. Torimitsu and J. Yumoto (NTT Basic Research Laboratories) for their encouragement and support. The authors with NTT owe special thanks to Prof. E. Kohn (University of Ulm, Germany) for his continuous suggestions throughout this work. This work was partly supported by the SCOPE project of the Ministry of Internal Affairs and Communications, Japan.",

year = "2006",

month = nov,

doi = "10.1016/j.diamond.2006.07.021",

language = "English",

volume = "15",

pages = "1954--1957",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "11-12 SPEC. ISS.",

}

TY - JOUR

T1 - Characterization of high-quality polycrystalline diamond and its high FET performance

AU - Ueda, K.

AU - Kasu, M.

AU - Yamauchi, Y.

AU - Makimoto, T.

AU - Schwitters, M.

AU - Twitchen, D. J.

AU - Scarsbrook, G. A.

AU - Coe, S. E.

N1 - Funding Information: The authors with NTT thank Dr. T. Enoki (NTT Photonics Laboratories) for discussions on RF devices. They also thank Drs. K. Torimitsu and J. Yumoto (NTT Basic Research Laboratories) for their encouragement and support. The authors with NTT owe special thanks to Prof. E. Kohn (University of Ulm, Germany) for his continuous suggestions throughout this work. This work was partly supported by the SCOPE project of the Ministry of Internal Affairs and Communications, Japan.

PY - 2006/11

Y1 - 2006/11

N2 - We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (fT) and power gain (fmax) were 45 and 120 GHz, respectively. The maximum drain current (IDS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.

AB - We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (fT) and power gain (fmax) were 45 and 120 GHz, respectively. The maximum drain current (IDS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.

KW - FET

KW - Hydrogen-terminated

KW - Polycrystalline diamond

KW - RF performance

UR - http://www.scopus.com/inward/record.url?scp=33751167220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751167220&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2006.07.021

DO - 10.1016/j.diamond.2006.07.021

M3 - Article

AN - SCOPUS:33751167220

SN - 0925-9635

VL - 15

SP - 1954

EP - 1957

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 11-12 SPEC. ISS.

ER -

Characterization of high-quality polycrystalline diamond and its high FET performance

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this